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MG400J2YS61A
MITSUBISHI IGBT Module
MG400J2YS61A(600V/400A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.9 V (typ.)
Equivalent Circuit
C1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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Package Dimensions
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 600 20 400 800 400 A 800 2160 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V N*m Unit V V A
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 400 A VCC = 300 V, IC = 400 A VGE = 15 V, RG = 7.5 (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 400 mA VGE = 15 V, IC = 400 A Tj = 25C Tj = 125C Min 6.0 0.10 Typ. 7.0 1.9 85 1.8 Max +3/-4 100 1.0 8.0 2.2 2.5 1.00 2.00 0.25 0.50 2.2 V s nF Unit mA nA mA V V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 300 V, VGE = 15 V Min 480 100 Typ. Max 125 6.5 Unit A C s
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3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.057 0.068 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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Remark

* Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 375 V = * 13.8 V < VGE < 16.0 V = = * RG > 7.5 = * Tj < 125C =

*
To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.

Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 13.8 7.5 Typ. 300 15 Max 375 16 20 Unit V V kHz
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IC - VCE
400 Common emitter Tj = 25C 15 V VGE = 20 V 300 12 V (A) 10 V
Collector current IC
9V 200
100 8V
0 0
1
2 Collector-emitter voltage
3 VCE (V)
4
5
IC - VCE
400 Common emitter Tj = 125C VGE = 20 V 300 (A) 12 V 10 V 9V 15 V
Collector current IC
200 8V
100
0 0
1
2 Collector-emitter voltage
3 VCE (V)
4
5
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VCE - VGE
12 (V) Common emitter 10 8 6 4 600 A 2 IC = 200 A 0 0 4 8 12 (V) 16 20 400 A Tj = 25C
Collector-emitter voltage
VCE
Gate-emitter voltage VGE
VCE - VGE
12 (V) Common emitter 10 8 6 4 2 IC = 200 A 0 0 4 8 12 (V) 16 20 400 A Tj = 125C
Collector-emitter voltage
VCE
600 A
Gate-emitter voltage VGE
VCE - VGE
12 (V) Common emitter 10 8 6 4 600 A 2 IC = 200 A 0 0 4 8 12 (V) 16 20 Tj = 40C
Collector-emitter voltage
VCE
400 A
Gate-emitter voltage VGE
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IC - VGE
600 Common emitter VCE = 5 V
(A) Collector current IC
400
-40C 200 125C
Tj = 25C
0 0
4
8 Gate-emitter voltage VGE (V)
12
16
IF - V F
400 Common cathode
300 Tj = 125C IF Forward current 200 Tj = 25C 100 (A)
0 0.0
0.5
1.0
1.5 (V)
2.0
2.5
Forward voltage VF
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Switching time - RG
10 5 3 Common emitter VCC = 300 V IC = 150 A VGE = 15 V
Tj = 25C Tj = 125C
toff td (off) ton td (on)
1 Switching time (s) 0.5 0.3
tr
tf 0.1 0.05 0.03
0.01 0
5
10 Gate resistance
15 RG ()
20
25
Switching time - IC
10 5 3 Common emitter VCC = 300 V RG = 7.5 VGE = 15 V toff td (off) 1 Switching time (s) 0.5 0.3 ton td (on) tr
Tj = 25C Tj = 125C
0.1 tf 0.05 0.03
0.01 0
100
200
300
400
500
Collector current IC (A)
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Switching loss - RG
500 Common emitter VCC = 300 V IC = 150 A VGE = 15 V
300
Tj = 25C Tj = 125C
(mJ)
100 Eon
Switching loss
50 Eoff 30
10 0
5
10 Gate resistance
15 RG ()
20
25
Switching loss - IC
100 Common emitter VCC = 300 V RG = 7.5 VGE = 15 V Tj = 25C Tj = 125C Eon 30 Eoff (mJ) Switching loss 10
50
5
3
1 0
100
200
300
400
500
Collector current IC (A)
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trr, Irr - IF
1000 Common emitter VCC = 300 V RG = 7.5 VGE = 15 V Tj = 25C Tj = 125C trr
500 Reverse recovery time trr (ns) Peak reverse recovery current Irr (A)
300
Irr 100
50
30
10 0
100
200 Forward current
300 IF (A)
400
500
Edsw - IF
10 Common emitter VCC = 300 V RG = 7.5 VGE = 15 V Tj = 25C Tj = 125C
5
(mJ)
3
Reverse recovery loss
Edsw
1
0.5
0.3
0.1 0
100
200 Forward current
300 IF (A)
400
500
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QG
500 Common emitter RL = 0.75 Tj = 25C 400 (V) 16 Gate-emitter voltage VGE (V) 20
Collector emitter voltage VCE
300
12
200
8
100
4
0 0
100 Charge
200 QG (nC)
300
0 400
C - VCE
300000
100000 50000 30000 (pF)
Cies
Capacitance C
10000 5000 3000 Coes
Cres 1000 500 300 VGE = 0 V f = 1 MHz Tc = 25C 100 0 0.1 1 Collector-emitter voltage VCE (V) 10 100
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Reverse bias SOA
1000
800
(A) Collector current IC 600 400 200
0 0
200
400 Collector-emitter voltage (V)
600
800
Rth - tw
1 Tc = 25C 0.5 0.3
0.1 (C/W) 0.05
Diode stage
Transistor stage 0.03
Rth (j-c)
0.01 0.005 0.003
0.001 0.001
0.01
0.1 Pulse width tw (s)
1
10
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